Measuring carrier density in parallel conduction layers of quantum Hall systems

M. Grayson*, F. Fischer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel conduction in the modulation-doped layer, this analysis quantitatively determines the charge density in the doping layer and can be used to estimate the mobility. To illustrate one application, experimental data show magnetic freeze-out of parallel conduction in a modulation-doped heterojunction. As another example, the carrier density of a minimally populated second subband in a two-subband quantum well is determined. A simple formula is derived that can estimate the carrier density in a highly resistive parallel layer from a single Hall measurement of the total system.

Original languageEnglish (US)
Article number013709
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 1 2005

ASJC Scopus subject areas

  • General Physics and Astronomy


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