Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers

S. MacK, M. A. Meitl, A. J. Baca, Z. T. Zhu, J. A. Rogers*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

150 Scopus citations

Abstract

This letter introduces a type of thin-film transistor that uses aligned arrays of thin (submicron) ribbons of single-crystal silicon created by lithographic patterning and anisotropic etching of bulk silicon (111) wafers. Devices that incorporate such ribbons printed onto thin plastic substrates show good electrical properties and mechanical flexibility. Effective device mobilities, as evaluated in the linear regime, were as high as 360 cm2 V-1 s-1, and on/off ratios were > 103. These results may represent important steps toward a low-cost approach to large-area, high-performance, mechanically flexible electronic systems for structural health monitors, sensors, displays, and other applications.

Original languageEnglish (US)
Article number213101
JournalApplied Physics Letters
Volume88
Issue number21
DOIs
StatePublished - May 21 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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