Mechanics of Smart-Cut® technology

Xi Qiao Feng*, Y. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Smart-Cut® is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production.

Original languageEnglish (US)
Pages (from-to)4299-4320
Number of pages22
JournalInternational Journal of Solids and Structures
Volume41
Issue number16-17
DOIs
StatePublished - Aug 1 2004

Fingerprint

Silicon-on-insulator
Silicon
Mechanics
Wafer
insulators
Hydrogen
Implantation
silicon
wafers
hydrogen ions
Dose
Ion implantation
Protons
implantation
Process Parameters
dosage
Defects
Ion Implantation
ULSI circuits
flaking

Keywords

  • Analytic solution
  • Chemo-mechanical process
  • Crack
  • Debonding
  • Fracture
  • Micro-mechanics
  • Semiconductor material
  • Stress intensity factor

ASJC Scopus subject areas

  • Modeling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Applied Mathematics

Cite this

Feng, Xi Qiao ; Huang, Y. / Mechanics of Smart-Cut® technology. In: International Journal of Solids and Structures. 2004 ; Vol. 41, No. 16-17. pp. 4299-4320.
@article{db638ea79d3a43109d85c5eed49f4c4f,
title = "Mechanics of Smart-Cut{\circledR} technology",
abstract = "Smart-Cut{\circledR} is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production.",
keywords = "Analytic solution, Chemo-mechanical process, Crack, Debonding, Fracture, Micro-mechanics, Semiconductor material, Stress intensity factor",
author = "Feng, {Xi Qiao} and Y. Huang",
year = "2004",
month = "8",
day = "1",
doi = "10.1016/j.ijsolstr.2004.02.054",
language = "English (US)",
volume = "41",
pages = "4299--4320",
journal = "International Journal of Solids and Structures",
issn = "0020-7683",
publisher = "Elsevier Limited",
number = "16-17",

}

Mechanics of Smart-Cut® technology. / Feng, Xi Qiao; Huang, Y.

In: International Journal of Solids and Structures, Vol. 41, No. 16-17, 01.08.2004, p. 4299-4320.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mechanics of Smart-Cut® technology

AU - Feng, Xi Qiao

AU - Huang, Y.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Smart-Cut® is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production.

AB - Smart-Cut® is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production.

KW - Analytic solution

KW - Chemo-mechanical process

KW - Crack

KW - Debonding

KW - Fracture

KW - Micro-mechanics

KW - Semiconductor material

KW - Stress intensity factor

UR - http://www.scopus.com/inward/record.url?scp=3042532471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042532471&partnerID=8YFLogxK

U2 - 10.1016/j.ijsolstr.2004.02.054

DO - 10.1016/j.ijsolstr.2004.02.054

M3 - Article

VL - 41

SP - 4299

EP - 4320

JO - International Journal of Solids and Structures

JF - International Journal of Solids and Structures

SN - 0020-7683

IS - 16-17

ER -