Mechanism of diamond growth on carbide substrates using fluorocarbon gases

K. J. Grannen; R P H Chang

Mechanism of diamond growth on carbide substrates using fluorocarbon gases

K. J. Grannen^*, R P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The etching and growth behavior of diamond in C_xF_y/O₂/ H₂ plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 10⁸ crystallites/cm². This compares to a density of 10² crystallites/cm² when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

Original language	English (US)
Title of host publication	Mechanisms of Thin Film Evolution
Editors	Seshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
Publisher	Publ by Materials Research Society
Pages	511-516
Number of pages	6
Volume	317
ISBN (Print)	1558992162
State	Published - Jan 1 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: Nov 29 1993 → Dec 3 1993

Other

Other	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	11/29/93 → 12/3/93

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Mechanism of diamond growth on carbide substrates using fluorocarbon gases",

abstract = "The etching and growth behavior of diamond in CxFy/O2/ H2 plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.",

author = "Grannen, {K. J.} and Chang, {R P H}",

year = "1994",

month = jan,

day = "1",

language = "English (US)",

isbn = "1558992162",

volume = "317",

pages = "511--516",

editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",

booktitle = "Mechanisms of Thin Film Evolution",

publisher = "Publ by Materials Research Society",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 03-12-1993",

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TY - GEN

T1 - Mechanism of diamond growth on carbide substrates using fluorocarbon gases

AU - Grannen, K. J.

AU - Chang, R P H

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The etching and growth behavior of diamond in CxFy/O2/ H2 plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

AB - The etching and growth behavior of diamond in CxFy/O2/ H2 plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0027929006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027929006&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027929006

SN - 1558992162

VL - 317

SP - 511

EP - 516

BT - Mechanisms of Thin Film Evolution

A2 - Desu, Seshu B.

A2 - Beach, David B.

A2 - Wessels, Bruce W.

A2 - Gokoglu, Suleyman

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

Y2 - 29 November 1993 through 3 December 1993

ER -

Mechanism of diamond growth on carbide substrates using fluorocarbon gases

Abstract

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ASJC Scopus subject areas

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