Mechanism of diamond growth on carbide substrates using fluorocarbon gases

K. J. Grannen*, R P H Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The etching and growth behavior of diamond in CxFy/O2/ H2 plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

Original languageEnglish (US)
Title of host publicationMechanisms of Thin Film Evolution
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages511-516
Number of pages6
Volume317
ISBN (Print)1558992162
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Grannen, K. J., & Chang, R. P. H. (1994). Mechanism of diamond growth on carbide substrates using fluorocarbon gases. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Mechanisms of Thin Film Evolution (Vol. 317, pp. 511-516). Publ by Materials Research Society.