Mechanism of sputter-induced orientation change in YBCO films on MgO (001)

Y. Huang*, B. V. Vuchic, P. Baldo, D. B. Buchholz, S. Mahajan, J. S. Lei, P. R. Markworth, K. L. Merkle, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The mechanisms of the sputter-induced orientation change in YBa2Cu3O7-x(YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction, Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change.

Original languageEnglish (US)
Number of pages1
JournalMaterials Research Society Symposium - Proceedings
Volume458
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 4 1996Dec 5 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Huang, Y., Vuchic, B. V., Baldo, P., Buchholz, D. B., Mahajan, S., Lei, J. S., Markworth, P. R., Merkle, K. L., & Chang, R. P. H. (1997). Mechanism of sputter-induced orientation change in YBCO films on MgO (001). Materials Research Society Symposium - Proceedings, 458.