Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions

S. A. Barnett*, J. E. Greene

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The basic mechanisms as well as the kinetics of epitaxial GaAs crystal growth by RF sputter deposition have been investigated. The film growth rate R was found to depend not only on the Ga flux, as in thermal evaporation, but also on the ratio of the incident arsenic to gallium fluxes and the film growth temperature. These additional dependences are related to the effect of the steady state As surface coverage θ{symbol}As on the average Ga atom surface binding energy 〈UGa〉 and hence on the secondary sputtering yield due to induced low energy ion bombardment of the growing film. A model was developed to relate θ{symbol}As to film growth parameters and thus to allow predictions of R which exhibited good agreement with experimental results. From this analysis, 〈UGa〉 was found to increase from 3.5 to 4.9 eV/atom as θ{symbol}As was increased from 0.2 to 0.6, corresponding to Ga-stabilized and As-stabilized surfaces, respectively.

Original languageEnglish (US)
Pages (from-to)401-416
Number of pages16
JournalSurface Science
Volume128
Issue number2-3
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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