Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions

S. A. Barnett; J. E. Greene

doi:10.1016/S0039-6028(83)80040-5

Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions

S. A. Barnett^*, J. E. Greene

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The basic mechanisms as well as the kinetics of epitaxial GaAs crystal growth by RF sputter deposition have been investigated. The film growth rate R was found to depend not only on the Ga flux, as in thermal evaporation, but also on the ratio of the incident arsenic to gallium fluxes and the film growth temperature. These additional dependences are related to the effect of the steady state As surface coverage θ{symbol}_As on the average Ga atom surface binding energy 〈U_Ga〉 and hence on the secondary sputtering yield due to induced low energy ion bombardment of the growing film. A model was developed to relate θ{symbol}_As to film growth parameters and thus to allow predictions of R which exhibited good agreement with experimental results. From this analysis, 〈U_Ga〉 was found to increase from 3.5 to 4.9 eV/atom as θ{symbol}_As was increased from 0.2 to 0.6, corresponding to Ga-stabilized and As-stabilized surfaces, respectively.

Original language	English (US)
Pages (from-to)	401-416
Number of pages	16
Journal	Surface Science
Volume	128
Issue number	2-3
DOIs	https://doi.org/10.1016/S0039-6028(83)80040-5
State	Published - 1983

Funding

The authors gratefully acknowledge the financial support of the Joint Services Electronics Program under contract number N00014-79-C-0424 during the course of this work.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(83)80040-5

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@article{eeea376abd1e453fb90b281b25c8b05b,

title = "Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions",

abstract = "The basic mechanisms as well as the kinetics of epitaxial GaAs crystal growth by RF sputter deposition have been investigated. The film growth rate R was found to depend not only on the Ga flux, as in thermal evaporation, but also on the ratio of the incident arsenic to gallium fluxes and the film growth temperature. These additional dependences are related to the effect of the steady state As surface coverage θ{symbol}As on the average Ga atom surface binding energy 〈UGa〉 and hence on the secondary sputtering yield due to induced low energy ion bombardment of the growing film. A model was developed to relate θ{symbol}As to film growth parameters and thus to allow predictions of R which exhibited good agreement with experimental results. From this analysis, 〈UGa〉 was found to increase from 3.5 to 4.9 eV/atom as θ{symbol}As was increased from 0.2 to 0.6, corresponding to Ga-stabilized and As-stabilized surfaces, respectively.",

author = "Barnett, {S. A.} and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Joint Services Electronics Program under contract number N00014-79-C-0424 during the course of this work.",

year = "1983",

doi = "10.1016/S0039-6028(83)80040-5",

language = "English (US)",

volume = "128",

pages = "401--416",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "2-3",

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TY - JOUR

T1 - Mechanisms of epitaxial GaAs crystal growth by sputter deposition

T2 - Role of ion/surface interactions

AU - Barnett, S. A.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Joint Services Electronics Program under contract number N00014-79-C-0424 during the course of this work.

PY - 1983

Y1 - 1983

N2 - The basic mechanisms as well as the kinetics of epitaxial GaAs crystal growth by RF sputter deposition have been investigated. The film growth rate R was found to depend not only on the Ga flux, as in thermal evaporation, but also on the ratio of the incident arsenic to gallium fluxes and the film growth temperature. These additional dependences are related to the effect of the steady state As surface coverage θ{symbol}As on the average Ga atom surface binding energy 〈UGa〉 and hence on the secondary sputtering yield due to induced low energy ion bombardment of the growing film. A model was developed to relate θ{symbol}As to film growth parameters and thus to allow predictions of R which exhibited good agreement with experimental results. From this analysis, 〈UGa〉 was found to increase from 3.5 to 4.9 eV/atom as θ{symbol}As was increased from 0.2 to 0.6, corresponding to Ga-stabilized and As-stabilized surfaces, respectively.

AB - The basic mechanisms as well as the kinetics of epitaxial GaAs crystal growth by RF sputter deposition have been investigated. The film growth rate R was found to depend not only on the Ga flux, as in thermal evaporation, but also on the ratio of the incident arsenic to gallium fluxes and the film growth temperature. These additional dependences are related to the effect of the steady state As surface coverage θ{symbol}As on the average Ga atom surface binding energy 〈UGa〉 and hence on the secondary sputtering yield due to induced low energy ion bombardment of the growing film. A model was developed to relate θ{symbol}As to film growth parameters and thus to allow predictions of R which exhibited good agreement with experimental results. From this analysis, 〈UGa〉 was found to increase from 3.5 to 4.9 eV/atom as θ{symbol}As was increased from 0.2 to 0.6, corresponding to Ga-stabilized and As-stabilized surfaces, respectively.

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U2 - 10.1016/S0039-6028(83)80040-5

DO - 10.1016/S0039-6028(83)80040-5

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VL - 128

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JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions

Abstract

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ASJC Scopus subject areas

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