Keyphrases
Arsenic
33%
Crystal Growth
100%
Epitaxial
100%
Film Growth
100%
GaAs Crystal
100%
Gallium
33%
Growth Parameters
33%
Growth Rate
33%
Growth Temperature
33%
Ion-surface Interaction
100%
Low-energy Ion Bombardment
33%
RF Sputtering Deposition
33%
Secondary Sputtering
33%
Sputter Deposition
100%
Sputtering Yield
33%
Steady State
33%
Surface Binding Energy
33%
Surface Coverage
33%
Thermal Evaporation
33%
Engineering
Arsenic
50%
Experimental Result
50%
Gallium Arsenide
100%
Good Agreement
50%
Growing Film
50%
Growth Parameter
50%
Growth Temperature
50%
Ion Implantation
50%
Sputtering Yield
50%
Surface Binding Energy
50%
Surface Coverage
50%
Material Science
Arsenic
25%
Crystal Growth
100%
Film Growth
100%
Gallium
25%
Gallium Arsenide
100%
Ion Bombardment
25%
Sputter Deposition
100%
Surface (Surface Science)
100%
Chemical Engineering
Film
100%
Growth Temperature
33%
Sputter Deposition
100%