Mechanistic understanding of tungsten oxide in-plane nanostructure growth: Via sequential infiltration synthesis

Jae Jin Kim, Hyo Seon Suh, Chun Zhou, Anil U. Mane, Byeongdu Lee, Soojeong Kim, Jonathan D. Emery, Jeffrey W. Elam, Paul F. Nealey, Paul Fenter, Timothy T. Fister*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Tungsten oxide (WO3-x) nanostructures with hexagonal in-plane arrangements were fabricated by sequential infiltration synthesis (SIS), using the selective interaction of gas phase precursors with functional groups in one domain of a block copolymer (BCP) self-assembled template. Such structures are highly desirable for various practical applications and as model systems for fundamental studies. The nanostructures were characterized by cross-sectional scanning electron microscopy, grazing-incidence small/wide-angle X-ray scattering (GISAXS/GIWAXS), and X-ray absorption near edge structure (XANES) measurements at each stage during the SIS process and subsequent thermal treatments, to provide a comprehensive picture of their evolution in morphology, crystallography and electronic structure. In particular, we discuss the critical role of SIS Al2O3 seeds toward modifying the chemical affinity and free volume in a polymer for subsequent infiltration of gas phase precursors. The insights into SIS growth obtained from this study are valuable to the design and fabrication of a wide range of targeted nanostructures.

Original languageEnglish (US)
Pages (from-to)3469-3479
Number of pages11
JournalNanoscale
Volume10
Issue number7
DOIs
StatePublished - Feb 21 2018

ASJC Scopus subject areas

  • Materials Science(all)

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    Kim, J. J., Suh, H. S., Zhou, C., Mane, A. U., Lee, B., Kim, S., Emery, J. D., Elam, J. W., Nealey, P. F., Fenter, P., & Fister, T. T. (2018). Mechanistic understanding of tungsten oxide in-plane nanostructure growth: Via sequential infiltration synthesis. Nanoscale, 10(7), 3469-3479. https://doi.org/10.1039/c7nr07642h