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Memory Cell for High-Density Arrays Based on a Multiterminal Superconducting-Ferromagnetic Device
I. P. Nevirkovets
, O. A. Mukhanov
Physics and Astronomy
Research output
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Contribution to journal
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Article
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peer-review
25
Scopus citations
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Dive into the research topics of 'Memory Cell for High-Density Arrays Based on a Multiterminal Superconducting-Ferromagnetic Device'. Together they form a unique fingerprint.
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Keyphrases
Array-based
100%
Josephson Current
100%
Memory Cell
100%
Four-terminal
100%
Permalloy
100%
Multi-terminal
100%
High-density Array
100%
Cell-based
50%
Superconductor
50%
Circuit Element
50%
AlOx
50%
Electric Current
50%
Insulator
50%
Ferromagnetic Materials
50%
Externally Applied Magnetic Field
50%
Memory Device
50%
Magnetization Vector
50%
SIS Junction
50%
Total Magnetic Moment
50%
Controlled Manipulation
50%
Cryogenic Memory
50%
Magnetization Orientation
50%
Single Flux Quantum Circuit
50%
Pseudo Spin Valve
50%
F2 Layer
50%
F1 Layer
50%
Material Science
Permalloy
100%
Density
100%
Superconducting Material
50%
Electronic Circuit
50%
Ferromagnetic Material
50%