TY - GEN
T1 - Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature
AU - Malliakas, Christos D.
AU - Wibowo, Arief C.
AU - Liu, Zhifu
AU - Peters, John A.
AU - Sebastian, Maria
AU - Jin, Hosub
AU - Chung, Duck Young
AU - Freeman, Arthur J.
AU - Wessels, Bruce W.
AU - Kanatzidis, Mercouri G.
PY - 2012
Y1 - 2012
N2 - We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.
AB - We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.
KW - Antimony chalcohalide
KW - Mercury chalcohalide
KW - Mobility-lifetime product
KW - Semiconductor
KW - X-ray detector
KW - γ-ray Detector
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U2 - 10.1117/12.929858
DO - 10.1117/12.929858
M3 - Conference contribution
AN - SCOPUS:84872966065
SN - 9780819492241
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
T2 - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Y2 - 13 August 2012 through 15 August 2012
ER -