Metal-insulator transition in quasi-two-dimensional Mo-C films

S. J. Lee*, John B Ketterson, Nandini Trivedi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We have studied the insulator-to-metal transition in Mo-C films by tuning the thickness from 2.6 to 20. The temperature dependence of the conductivity evolves from hopping transport, for the thin insulating films, to a lnT dependence for the thicker metallic films. In the insulating regime we find a variable range Mott hopping law at high temperatures crossing over to Efros-Shklovskii hopping at lower temperatures with the opening of a soft Coulomb gap. We also obtain the dependence of the characteristic parameters on the film thickness.

Original languageEnglish (US)
Pages (from-to)12695-12700
Number of pages6
JournalPhysical Review B
Volume46
Issue number19
DOIs
StatePublished - Jan 1 1992

ASJC Scopus subject areas

  • Condensed Matter Physics

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