@inproceedings{7efe4e3601a94a36a26517d6069091ea,
title = "METAL ORGANIC CHEMICAL VAPOR DEPOSITION.",
abstract = "In this paper it is shown that the low pressure organometallic chemical vapor deposition (LP-MOCVD) technique of growing semiconductors is generally applicable to most of the III-V compounds that are currently of interest. The principles of the technique and five selected specific applications are detailed: 1) GaAlAs/GaAs quantum well lasers; 2) GaAlAs/GaAs modulation doped structures; 3) Two dimensional electron gas layer at GaInAs/InP interfaces; 4) Low threshold-current density lasers operating at 1. 3 mu m; 5) Multiquantum well GaInAs/InP heterostructures.",
author = "Duchemin, {J. P.} and S. Hersee and M. Razeghi and Poisson, {M. A.}",
year = "1985",
doi = "10.1007/978-94-009-5073-3_18",
language = "English (US)",
isbn = "9024731186",
series = "NATO ASI Series, Series E: Applied Sciences",
publisher = "Martinus Nijhoff Publ",
pages = "677--719",
booktitle = "NATO ASI Series, Series E",
}