J. P. Duchemin*, S. Hersee, M. Razeghi, M. A. Poisson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this paper it is shown that the low pressure organometallic chemical vapor deposition (LP-MOCVD) technique of growing semiconductors is generally applicable to most of the III-V compounds that are currently of interest. The principles of the technique and five selected specific applications are detailed: 1) GaAlAs/GaAs quantum well lasers; 2) GaAlAs/GaAs modulation doped structures; 3) Two dimensional electron gas layer at GaInAs/InP interfaces; 4) Low threshold-current density lasers operating at 1. 3 mu m; 5) Multiquantum well GaInAs/InP heterostructures.

Original languageEnglish (US)
Title of host publicationNATO ASI Series, Series E
Subtitle of host publicationApplied Sciences
EditorsLeroy L. Chang, Klaus Ploog
PublisherMartinus Nijhoff Publ
Number of pages43
ISBN (Print)9024731186
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Engineering(all)


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