Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang*, S. C. Cheng, J. A. Belot, R. J. McNeely, J. Cheng, B. Marcordes, T. J. Marks, J. Y. Dai, R. P.H. Chang, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020 cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020 cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

Original languageEnglish (US)
Pages (from-to)3-10
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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