Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films

B. J. Hinds; D. L. Schulz; D. A. Neumayer; B. Han; T. J. Marks; Y. Y. Wang; V. P. Dravid; J. L. Schindler; T. P. Hogan; C. R. Kannewurf

doi:10.1063/1.112638

Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl₂Ba₂Ca₂Cu₃O ₁₀ thin films

B. J. Hinds^*, D. L. Schulz, D. A. Neumayer, B. Han, T. J. Marks, Y. Y. Wang, V. P. Dravid, J. L. Schindler, T. P. Hogan, C. R. Kannewurf

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Phase-pure epitaxial Tl₂Ba₂Ca₂Cu ₃O₁₀ thin films have been grown on single crystal (110) LaAlO₃ substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-O_x precursor films are grown on LaAlO₃ (110) substrates using Ba(hfa)₂tet, Ca(hfa) ₂tet, and Cu(hfa)₂ (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl ₂O₃, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O₂/Ar atmosphere. The films have a transport-measured T_c=115 K and J_c=1.5×10⁵ A/cm² (80 K), while magnetic hysteresis measurements yield J_c= 6×10⁵ A/cm² (77 K). Preliminary surface resistance measurements give R_s=0.35 mΩ at 5 K, 10 GHz.

Original language	English (US)
Pages (from-to)	231-233
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	2
DOIs	https://doi.org/10.1063/1.112638
State	Published - 1994

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Physics and Astronomy (miscellaneous)

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@article{835f3ddcce614856aff9d878f21c989f,

title = "Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films",

abstract = "Phase-pure epitaxial Tl2Ba2Ca2Cu 3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2tet, Ca(hfa) 2tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl 2O3, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc= 6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.",

author = "Hinds, {B. J.} and Schulz, {D. L.} and Neumayer, {D. A.} and B. Han and Marks, {T. J.} and Wang, {Y. Y.} and Dravid, {V. P.} and Schindler, {J. L.} and Hogan, {T. P.} and Kannewurf, {C. R.}",

year = "1994",

doi = "10.1063/1.112638",

language = "English (US)",

volume = "65",

pages = "231--233",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films

AU - Hinds, B. J.

AU - Schulz, D. L.

AU - Neumayer, D. A.

AU - Han, B.

AU - Marks, T. J.

AU - Wang, Y. Y.

AU - Dravid, V. P.

AU - Schindler, J. L.

AU - Hogan, T. P.

AU - Kannewurf, C. R.

PY - 1994

Y1 - 1994

N2 - Phase-pure epitaxial Tl2Ba2Ca2Cu 3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2tet, Ca(hfa) 2tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl 2O3, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc= 6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.

AB - Phase-pure epitaxial Tl2Ba2Ca2Cu 3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2tet, Ca(hfa) 2tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl 2O3, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc= 6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.

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Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl₂Ba₂Ca₂Cu₃O ₁₀ thin films

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