Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films

B. J. Hinds*, D. L. Schulz, D. A. Neumayer, B. Han, Tobin Jay Marks, Y. Y. Wang, Vinayak P Dravid, J. L. Schindler, T. P. Hogan, C. R. Kannewurf

*Corresponding author for this work

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19 Scopus citations

Abstract

Phase-pure epitaxial Tl2Ba2Ca2Cu 3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2tet, Ca(hfa) 2tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl 2O3, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc= 6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.

Original languageEnglish (US)
Pages (from-to)231-233
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number2
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hinds, B. J., Schulz, D. L., Neumayer, D. A., Han, B., Marks, T. J., Wang, Y. Y., Dravid, V. P., Schindler, J. L., Hogan, T. P., & Kannewurf, C. R. (1994). Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films. Applied Physics Letters, 65(2), 231-233. https://doi.org/10.1063/1.112638