Metal-semiconductor interfaces: Magnetic and electronic properties and Schottky barrier in Fen/(ZnSe)m (001) superlattices

A. Continenza*, S. Massidda, Arthur J Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Results of a systematic local-density study of the electronic and magnetic properties of Fen/(ZnSe)m [namely, Fe1/(ZnSe)1, Fe3/(ZnSe)1, and Fe3/(ZnSe)2] superlattices are presented. The effects of varying Fe and semiconductor layer thicknesses on the magnetic and electronic properties of the superlattice are analyzed. In particular, we found that (i) the enhanced Fe magnetism that characterizes the Fe-monolayer superlattice is suppressed as the Fe thickness is increased; (ii) some charge is transferred from the Fe layers into the ZnSe region; (iii) the interface effects are rapidly screened in the inner Fe layers; and (iv) a significant role on the Fe magnetism is played by the geometrical site coordination. Finally, for the thickest superlattice, the Schottky-barrier height is estimated.

Original languageEnglish (US)
Pages (from-to)2904-2913
Number of pages10
JournalPhysical Review B
Volume42
Issue number5
DOIs
StatePublished - Jan 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics

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