Metal-semiconductor transition and magnetic properties of epitaxially grown MnAsGaAs superlattices

J. H. Song; Y. Cui; J. J. Lee; S. L. Cho; J. B. Ketterson

doi:10.1063/1.2832879

Metal-semiconductor transition and magnetic properties of epitaxially grown MnAsGaAs superlattices

J. H. Song, Y. Cui, J. J. Lee, S. L. Cho, J. B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We successfully grew epitaxial MnAsGaAs superlattices at various growth temperatures (Tg) with a periodicity of 55 nm using molecular-beam epitaxy and characterized their magnetic and electrical transport properties. Structural analysis shows that the magnetic anisotropy originates from the crystal domain structure of the MnAs layers. The metallic behavior for the sample with Tg =375 °C systematically changed to semiconducting on increasing Tg up to 540 °C. The transport properties of thin single layered MnAs films with a thickness of 20 nm showed the same Tg dependency. These observations indicate that the semiconducting characteristics of MnAsGaAs superlattices are attributable to a radical alteration of the electronic structure of the MnAs layers.

Original language	English (US)
Article number	07B501
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2832879
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2832879

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title = "Metal-semiconductor transition and magnetic properties of epitaxially grown MnAsGaAs superlattices",

abstract = "We successfully grew epitaxial MnAsGaAs superlattices at various growth temperatures (Tg) with a periodicity of 55 nm using molecular-beam epitaxy and characterized their magnetic and electrical transport properties. Structural analysis shows that the magnetic anisotropy originates from the crystal domain structure of the MnAs layers. The metallic behavior for the sample with Tg =375 °C systematically changed to semiconducting on increasing Tg up to 540 °C. The transport properties of thin single layered MnAs films with a thickness of 20 nm showed the same Tg dependency. These observations indicate that the semiconducting characteristics of MnAsGaAs superlattices are attributable to a radical alteration of the electronic structure of the MnAs layers.",

author = "Song, {J. H.} and Y. Cui and Lee, {J. J.} and Cho, {S. L.} and Ketterson, {J. B.}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-331-C00080).",

year = "2008",

doi = "10.1063/1.2832879",

language = "English (US)",

volume = "103",

journal = "Journal of Applied Physics",

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T1 - Metal-semiconductor transition and magnetic properties of epitaxially grown MnAsGaAs superlattices

AU - Song, J. H.

AU - Cui, Y.

AU - Lee, J. J.

AU - Cho, S. L.

AU - Ketterson, J. B.

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-331-C00080).

PY - 2008

Y1 - 2008

N2 - We successfully grew epitaxial MnAsGaAs superlattices at various growth temperatures (Tg) with a periodicity of 55 nm using molecular-beam epitaxy and characterized their magnetic and electrical transport properties. Structural analysis shows that the magnetic anisotropy originates from the crystal domain structure of the MnAs layers. The metallic behavior for the sample with Tg =375 °C systematically changed to semiconducting on increasing Tg up to 540 °C. The transport properties of thin single layered MnAs films with a thickness of 20 nm showed the same Tg dependency. These observations indicate that the semiconducting characteristics of MnAsGaAs superlattices are attributable to a radical alteration of the electronic structure of the MnAs layers.

AB - We successfully grew epitaxial MnAsGaAs superlattices at various growth temperatures (Tg) with a periodicity of 55 nm using molecular-beam epitaxy and characterized their magnetic and electrical transport properties. Structural analysis shows that the magnetic anisotropy originates from the crystal domain structure of the MnAs layers. The metallic behavior for the sample with Tg =375 °C systematically changed to semiconducting on increasing Tg up to 540 °C. The transport properties of thin single layered MnAs films with a thickness of 20 nm showed the same Tg dependency. These observations indicate that the semiconducting characteristics of MnAsGaAs superlattices are attributable to a radical alteration of the electronic structure of the MnAs layers.

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Metal-semiconductor transition and magnetic properties of epitaxially grown MnAsGaAs superlattices

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