Metal Sulfide Ion Exchangers: High Acid Stability of Na2xMg2y-xSn4-yS8 (NMS) and Topotactic Conversion to 2D Solid Acids with Semiconducting Character

Michael A. Quintero, Anastasia D. Pournara, Richard Godsel, Zhi Li, Shobhana Panuganti, Xiuquan Zhou, Christopher Wolverton, Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Metal sulfide ion exchange materials (MSIEs) are of interest for nuclear waste remediation applications. We report the high stability of two structurally related metal sulfide ion exchange materials, Na2xMg2y-xSn4-yS8 (Mg-NMS) and Na2SnS3 (Na-NMS), in strongly acid media, in addition to the preparation of Na2xNi2y-xSn4-yS8 (Ni-NMS). Their formation progress during synthesis is studied with in-situ methods, with the target phases appearing in <15 min, reaction completion in <12 h, and high yields (75-80%). Upon contact with nitric or hydrochloric acid, these materials topotactically exchange Na+ for H+, proceeding in a stepwise protonation pathway for Na5.33Sn2.67S8. Na-NMS is stable in 2 M HNO3 and Mg-NMS is stable in 4 M HNO3 for up to 4 h, while both NMS materials are stable in 6 M HCl for up to 4 days. However, the treatment of Mg-NMS and Na-NMS with 2-6 M H2SO4 reveals a much slower protonation process since after 4 h of contact both NMS and HMS are present in the solution. The resultant protonated materials, H2xMg2y-xSn4-yS8 and H4x[(HyNay-1)1.33xSn4-1.33x]S8, are themselves solid acids and readily react with and intercalate a variety of organic amines, where the band gap of the resultant adduct is influenced by amine choice and can be tuned within the range of 1.88(5)-2.27(5) eV. The work function energy values for all materials were extracted from photoemission yield spectroscopy in air (PYSA) measurements and range from 5.47 (2) to 5.76 (2) eV, and the relative band alignments of the materials are discussed. DFT calculations suggest that the electronic structure of Na2MgSn3S8 and H2MgSn3S8 makes them indirect gap semiconductors with multi-valley band edges, with carriers confined to the [MgSn3S8]2- layers. Light electron effective masses indicate high electron mobilities.

Original languageEnglish (US)
Pages (from-to)15971-15982
Number of pages12
JournalInorganic chemistry
Volume62
Issue number39
DOIs
StatePublished - Oct 2 2023

Funding

This synthesis and material characterization study was supported by the Department of Energy’s Nuclear Energy University Program (NEUP) through project 21-24188. R. Godsel acknowledges support from the Northwestern University for an undergraduate research Fellowship. This study made use of IMSERC at the Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the State of Illinois, and IIN. This study used the EPIC facility of Northwestern University’s NUANCE Center, which has received support from the SHyNE Resource (NSF ECCS-2025633), the IIN, and the Northwestern MRSEC program (NSF DMR-1720139). Elemental analysis was performed at the Northwestern University Quantitative Bio-element Imaging Center, generously supported by the NIH under Grant S10OD020118. The synthetic aspects of this work were supported in part by National Science Foundation Grant DMR-2305731.

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry

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