TY - JOUR
T1 - Metallic and insulating states at a bent quantum Hall junction
AU - Grayson, M.
AU - Steinke, L.
AU - Schuh, D.
AU - Bichler, M.
AU - Hoeppel, L.
AU - Smet, J.
AU - Klitzing, K. V.
AU - Maude, D. K.
AU - Abstreiter, G.
PY - 2007/11/13
Y1 - 2007/11/13
N2 - A nonplanar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall systems are joined at a sharp right angle. When both facets are at equal filling factor ν the junction hosts a channel with nonquantized conductance, dependent on ν. The state is metallic at ν=1/3, with conductance along the junction increasing as the temperature T drops. At ν=1,2 it is strongly insulating, and at ν=3,4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.
AB - A nonplanar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall systems are joined at a sharp right angle. When both facets are at equal filling factor ν the junction hosts a channel with nonquantized conductance, dependent on ν. The state is metallic at ν=1/3, with conductance along the junction increasing as the temperature T drops. At ν=1,2 it is strongly insulating, and at ν=3,4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.
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U2 - 10.1103/PhysRevB.76.201304
DO - 10.1103/PhysRevB.76.201304
M3 - Article
AN - SCOPUS:36148974007
SN - 1098-0121
VL - 76
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 201304
ER -