Metallic and insulating states at a bent quantum Hall junction

Matthew A Grayson*, L. Steinke, D. Schuh, M. Bichler, L. Hoeppel, J. Smet, K. V. Klitzing, D. K. Maude, G. Abstreiter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

A nonplanar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall systems are joined at a sharp right angle. When both facets are at equal filling factor ν the junction hosts a channel with nonquantized conductance, dependent on ν. The state is metallic at ν=1/3, with conductance along the junction increasing as the temperature T drops. At ν=1,2 it is strongly insulating, and at ν=3,4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

Original languageEnglish (US)
Article number201304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number20
DOIs
StatePublished - Nov 13 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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