Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates

P. Kung; A. Saxler; X. Zhang; D. Walker; R. Lavado; M. Razeghi

doi:10.1063/1.116898

Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO₂ substrates

P. Kung^*, A. Saxler, X. Zhang, D. Walker, R. Lavado, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO₂ substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence.

Original language	English (US)
Pages (from-to)	2116-2118
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	14
DOIs	https://doi.org/10.1063/1.116898
State	Published - Sep 30 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.116898

Cite this

@article{97414aa0216e4f749e7695f370574d5d,

title = "Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates",

abstract = "We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence.",

author = "P. Kung and A. Saxler and X. Zhang and D. Walker and R. Lavado and M. Razeghi",

year = "1996",

month = sep,

day = "30",

doi = "10.1063/1.116898",

language = "English (US)",

volume = "69",

pages = "2116--2118",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates

AU - Kung, P.

AU - Saxler, A.

AU - Zhang, X.

AU - Walker, D.

AU - Lavado, R.

AU - Razeghi, M.

PY - 1996/9/30

Y1 - 1996/9/30

N2 - We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence.

AB - We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence.

UR - http://www.scopus.com/inward/record.url?scp=0000847617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000847617&partnerID=8YFLogxK

U2 - 10.1063/1.116898

DO - 10.1063/1.116898

M3 - Article

AN - SCOPUS:0000847617

SN - 0003-6951

VL - 69

SP - 2116

EP - 2118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO₂ substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this