Metalorganic chemical vapor deposition of undoped In1-xAl xAs on InP

M. A. Di Forte-Poisson*, M. Razeghi, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In1-x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600-650 °C. By adjusting the relative ratio of In and Al, lattice matched In 0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X-ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods.

Original languageEnglish (US)
Pages (from-to)7187-7189
Number of pages3
JournalJournal of Applied Physics
Volume54
Issue number12
DOIs
StatePublished - Dec 1 1983

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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