Abstract
Phase-pure epitaxial thin films of the YBa2Cu3O 7-δ lattice-matched, low dielectric loss perovskite insulator NdGaO3 have been grown on (110) LaAlO3 substrates by a metalorganic chemical vapor deposition (MOCVD)/post-annealing process. Amorphous Nd-Ga-O films are first prepared by MOCVD using the volatile metalorganic β-diketonate precursors Nd(dpm)3 and Ga(dpm)3 (dpm=dipivaloylmethanate). Subsequent postannealing affords phase pure, highly oriented [(001) and/or (110) orientations perpendicular to the substrate surface] and epitaxial NdGaO3 films as assessed by x-ray diffraction θ-2θ, ω, and φ scans. Cross-sectional high-resolution electron microscopic images show that the epitaxial growth occurs with atomically abrupt film-substrate interfaces and with coexisting NdGaO 3 (001) and (110) orientation domains.
Original language | English (US) |
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Pages (from-to) | 3047-3049 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 25 |
DOIs | |
State | Published - 1992 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)