We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500 × 10 μm 2 ridge waveguide laser, the lasing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm 2 under pulsed operation. The pulsed lasers can operate up to 286 K.
ASJC Scopus subject areas
- Physics and Astronomy(all)