Metamorphic InGaAs quantum well laser diodes at 1.5μm on GaAs grown by molecular beam epitaxy

Hai Li Wang*, Donghai Wu, Bing Peng Wu, Hqiao Qiao Ni, She Song Huang, Yong Hua Xiong, Peng Fei Wang, Qin Han, Zhi Chuan Niu, I. Tngring, S. M. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500 × 10 μm 2 ridge waveguide laser, the lasing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm 2 under pulsed operation. The pulsed lasers can operate up to 286 K.

Original languageEnglish (US)
Article number014214
JournalChinese Physics Letters
Volume26
Issue number1
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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