Metamorphic InGaAs telecom lasers on GaAs

I. Tångring; Y. X. Song; Donghai Wu; Z. C. Niu; S. M. Wang; A. Larsson

doi:10.1117/12.808787

Metamorphic InGaAs telecom lasers on GaAs

I. Tångring^*, Y. X. Song, Donghai Wu, Z. C. Niu, S. M. Wang, A. Larsson

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Original language	English (US)
Article number	723003
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7230
DOIs	https://doi.org/10.1117/12.808787
State	Published - 2009
Event	Novel In-Plane Semiconductor Lasers VIII - San Jose, CA, United States Duration: Jan 26 2009 → Jan 29 2009

Keywords

Compositionally graded buffer layer
GaAs
InGaAs
Metamorphic
Molecular beam epitaxy
Quantum well
Telecom laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.808787

Cite this

@article{461c780669cd4037acb4f8b6b0ed5d07,

title = "Metamorphic InGaAs telecom lasers on GaAs",

abstract = "We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.",

keywords = "Compositionally graded buffer layer, GaAs, InGaAs, Metamorphic, Molecular beam epitaxy, Quantum well, Telecom laser",

author = "I. T{\aa}ngring and Song, {Y. X.} and Donghai Wu and Niu, {Z. C.} and Wang, {S. M.} and A. Larsson",

note = "Funding Information: Acknowledgments. This study was financially supported by a Grant for Developmental Scientific Research from the Ministry of Education, Science and Culture of Japan in 1988 and 1989 (No. 638770091) for which the authors' thanks are due.; Novel In-Plane Semiconductor Lasers VIII ; Conference date: 26-01-2009 Through 29-01-2009",

year = "2009",

doi = "10.1117/12.808787",

language = "English (US)",

volume = "7230",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

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TY - JOUR

T1 - Metamorphic InGaAs telecom lasers on GaAs

AU - Tångring, I.

AU - Song, Y. X.

AU - Wu, Donghai

AU - Niu, Z. C.

AU - Wang, S. M.

AU - Larsson, A.

N1 - Funding Information: Acknowledgments. This study was financially supported by a Grant for Developmental Scientific Research from the Ministry of Education, Science and Culture of Japan in 1988 and 1989 (No. 638770091) for which the authors' thanks are due.

PY - 2009

Y1 - 2009

N2 - We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

AB - We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

KW - Compositionally graded buffer layer

KW - GaAs

KW - InGaAs

KW - Metamorphic

KW - Molecular beam epitaxy

KW - Quantum well

KW - Telecom laser

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DO - 10.1117/12.808787

M3 - Conference article

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SN - 0277-786X

VL - 7230

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 723003

T2 - Novel In-Plane Semiconductor Lasers VIII

Y2 - 26 January 2009 through 29 January 2009

ER -

Metamorphic InGaAs telecom lasers on GaAs

Abstract

Keywords

ASJC Scopus subject areas

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