Metamorphic InGaAs telecom lasers on GaAs

I. Tångring*, Y. X. Song, Donghai Wu, Z. C. Niu, S. M. Wang, A. Larsson

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Original languageEnglish (US)
Article number723003
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7230
DOIs
StatePublished - Apr 6 2009
EventNovel In-Plane Semiconductor Lasers VIII - San Jose, CA, United States
Duration: Jan 26 2009Jan 29 2009

Keywords

  • Compositionally graded buffer layer
  • GaAs
  • InGaAs
  • Metamorphic
  • Molecular beam epitaxy
  • Quantum well
  • Telecom laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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