METHOD OF ENHANCED LITHIATION OF DOPED SILICON CARBIDE VIA HIGH TEMPERATURE ANNEALING IN AN INERT ATMOSPHERE

Michael Bedzyk (Inventor), Mark Hersam (Inventor)

Research output: Patent

Fingerprint

Dive into the research topics of 'METHOD OF ENHANCED LITHIATION OF DOPED SILICON CARBIDE VIA HIGH TEMPERATURE ANNEALING IN AN INERT ATMOSPHERE'. Together they form a unique fingerprint.

Keyphrases

Material Science

Physics

Engineering

Chemical Engineering