TY - PAT
T1 - Method of Using Group III-V Ferromagnetic/Non-Magnetic Semiconductor Heterojunctions and Magnetodiodes
AU - Wessels, Bruce
N1 - filingdate: 2011-4-29
issueddate: 2015-5-5
Status: published
attorneydocketnumber: 2005-014-03
PY - 2015/5/5
Y1 - 2015/5/5
N2 - Magnetic Field Sensors
NU 2005-014
Inventors
Bruce Wessels
Steven May
Abstract
Northwestern researchers have developed a novel "spintronic" magnetodiode based on a III-V ferromagnetic semiconductor and a III-V nonmagnetic semiconductor heterojunction. The diodes exhibit a large junction magnetoresistance that is linearly dependent on the applied magnetic field at room temperature, offering potential for new magnetic field sensor, gaussmeter, or other magnetoresistive devices. Magnetic sensors are employed in a range of applications, including geophysical, automotive, biomedical measurement and control equipment. Recent advances in spintronic physics provide the basis for construction of new semiconductor magnetodiodes that overcome several limitations of the prior art. Thus, fabrication of an epitaxial heterojunction, formed by metal-organic vapor phase epitaxy, enables construction of a novel magnetodiode. The magnetoresistance of the junctions measured as a function of forward bias and applied magnetic field is linear at cryogenic and room temperature from 0.1 to 9 Tesla and 1.5 to 9 Tesla, respectively, and potentially higher fields. The difference between the longitudinal and transverse magnetoresistance is only 26% and 30% at 295 K and 78 K, respectively, and provides a single device capable of sensing fields in both directions.
Applications
Magnetic Sensors in Measurement and Analytical Equipment: geophysical, automotive and biomedical
Optoelectronic Devices: magnetic field sensor, gaussmeter and other magnetoresistive devices
Advantages
Compatible with current semiconductor structures
Capability of magnetic imaging or interference while operating linearly in high fields
Sensitivity to longitudinal and transverse fields
Lower power consumption
Single device capable of sensing fields in both directions
IP Status
Issued US Patent No. 7,956,608
Marketing Contact
Allan Nader, PhD
Invention Manager
(e) [email protected]
(p) 847-497-4456
AB - Magnetic Field Sensors
NU 2005-014
Inventors
Bruce Wessels
Steven May
Abstract
Northwestern researchers have developed a novel "spintronic" magnetodiode based on a III-V ferromagnetic semiconductor and a III-V nonmagnetic semiconductor heterojunction. The diodes exhibit a large junction magnetoresistance that is linearly dependent on the applied magnetic field at room temperature, offering potential for new magnetic field sensor, gaussmeter, or other magnetoresistive devices. Magnetic sensors are employed in a range of applications, including geophysical, automotive, biomedical measurement and control equipment. Recent advances in spintronic physics provide the basis for construction of new semiconductor magnetodiodes that overcome several limitations of the prior art. Thus, fabrication of an epitaxial heterojunction, formed by metal-organic vapor phase epitaxy, enables construction of a novel magnetodiode. The magnetoresistance of the junctions measured as a function of forward bias and applied magnetic field is linear at cryogenic and room temperature from 0.1 to 9 Tesla and 1.5 to 9 Tesla, respectively, and potentially higher fields. The difference between the longitudinal and transverse magnetoresistance is only 26% and 30% at 295 K and 78 K, respectively, and provides a single device capable of sensing fields in both directions.
Applications
Magnetic Sensors in Measurement and Analytical Equipment: geophysical, automotive and biomedical
Optoelectronic Devices: magnetic field sensor, gaussmeter and other magnetoresistive devices
Advantages
Compatible with current semiconductor structures
Capability of magnetic imaging or interference while operating linearly in high fields
Sensitivity to longitudinal and transverse fields
Lower power consumption
Single device capable of sensing fields in both directions
IP Status
Issued US Patent No. 7,956,608
Marketing Contact
Allan Nader, PhD
Invention Manager
(e) [email protected]
(p) 847-497-4456
M3 - Patent
M1 - 9024370
ER -