Micro-Raman measurements of bending stresses in micromachined silicon flexures

V. T. Srikar*, Anna K. Swan, M. Selim Ünlü, Bennett B. Goldberg, S. Mark Spearing

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

123 Scopus citations


Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of ∼10 MPa and spatial resolution of ∼1 μm. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.

Original languageEnglish (US)
Pages (from-to)779-787
Number of pages9
JournalJournal of Microelectromechanical Systems
Issue number6
StatePublished - Dec 2003


  • Micro-Raman
  • Microelectromechanical systems (MEMS)
  • Reliability
  • Stress

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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