Micro-Raman measurements of bending stresses in micromachined silicon flexures

V. T. Srikar*, Anna K. Swan, M. Selim Ünlü, Bennett B. Goldberg, S. Mark Spearing

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

141 Scopus citations

Abstract

Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of ∼10 MPa and spatial resolution of ∼1 μm. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.

Original languageEnglish (US)
Pages (from-to)779-787
Number of pages9
JournalJournal of Microelectromechanical Systems
Volume12
Issue number6
DOIs
StatePublished - Dec 2003

Funding

Manuscript January 16, 2003; revised May 16, 2003. The structures were fabricated at the Microsystems Technology Laboratories at the Massachusetts Institute of Technology (MIT), as part of a previous study, with financial support and encouragement from Professor S. Senturia. The micro-Raman spectroscopy was supported by the National Science Foundation NIRT ECS-0210752. Subject Editor W. N. Sharpe, Jr.

Keywords

  • Micro-Raman
  • Microelectromechanical systems (MEMS)
  • Reliability
  • Stress

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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