Abstract
Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of ∼10 MPa and spatial resolution of ∼1 μm. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.
Original language | English (US) |
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Pages (from-to) | 779-787 |
Number of pages | 9 |
Journal | Journal of Microelectromechanical Systems |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2003 |
Funding
Manuscript January 16, 2003; revised May 16, 2003. The structures were fabricated at the Microsystems Technology Laboratories at the Massachusetts Institute of Technology (MIT), as part of a previous study, with financial support and encouragement from Professor S. Senturia. The micro-Raman spectroscopy was supported by the National Science Foundation NIRT ECS-0210752. Subject Editor W. N. Sharpe, Jr.
Keywords
- Micro-Raman
- Microelectromechanical systems (MEMS)
- Reliability
- Stress
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering