Abstract
Micro hot-film shear-stress sensors have been designed and fabricated by surface micromachining technology compatible with IC technology. A poly-silicon strip, 2μm×80μm, is deposited on the top of a thin silicon nitride film and functions as the sensor element. By using sacrificial-layer technique, a cavity (vacuum chamber), 200×200×2μm3, is placed between the silicon nitride film and silicon substrate. This cavity significantly decreases the heat loss to the substrate. For comparison purposes, a sensor structure without a cavity has also been designed and fabricated on the same chip. Theoretical analyses for the two vertical structures with and without a cavity show that the former has a lower frequency response and higher sensitivity than the latter. When the sensor is operated in constant temperature mode, the cut-off frequencies can reach 130 k-Hz and 9 k-Hz respectively for the sensors without and with cavities.
Original language | English (US) |
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Title of host publication | Conference Record - IEEE Instrumentation and Measurement Technology Conference |
Publisher | IEEE |
Pages | 171-174 |
Number of pages | 4 |
State | Published - Jan 1 1995 |
Event | Proceedings of the 1995 IEEE Instrumentation and Measurement Technology Conference - Naltham, MA, USA Duration: Apr 23 1995 → Apr 26 1995 |
Other
Other | Proceedings of the 1995 IEEE Instrumentation and Measurement Technology Conference |
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City | Naltham, MA, USA |
Period | 4/23/95 → 4/26/95 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering