Microcantilever array with embedded metal oxide semiconductor field effect transistor actuators for deflection control, deflection sensing, and high frequency oscillation

Stanley S. Chou, Yun Young Kim, Arvind Srivastava, Benjamin Murphy, Oluwaseyi Balogun, Soo Hyun Tark, Gajendra Shekhawat, Vinayak P. Dravid

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Abstract

A batch fabricated microcantilever array with embedded metal oxide semiconductor field effect transistor (MOSFET) is demonstrated to behave as an actuator as well as a strain sensor. Actuation is made possible through MOSFET self-heating effect and metal-silicon bimaterial thermal expansion mismatch. Precise cantilever deflection is achieved with gate modulated saturation current. Controllable deflection and oscillation are demonstrated, with amplitude of 212 nm measured through laser interferometry near first resonant frequency. Higher amplitude is attainable through higher bias. Such in situ actuation and sensing promises to have applications ranging from nanolithography to microfluidic mixing, among others, which require precise and controllable nanoscale deflection.

Original languageEnglish (US)
Article number224103
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
StatePublished - Jun 15 2009

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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