Abstract
A batch fabricated microcantilever array with embedded metal oxide semiconductor field effect transistor (MOSFET) is demonstrated to behave as an actuator as well as a strain sensor. Actuation is made possible through MOSFET self-heating effect and metal-silicon bimaterial thermal expansion mismatch. Precise cantilever deflection is achieved with gate modulated saturation current. Controllable deflection and oscillation are demonstrated, with amplitude of 212 nm measured through laser interferometry near first resonant frequency. Higher amplitude is attainable through higher bias. Such in situ actuation and sensing promises to have applications ranging from nanolithography to microfluidic mixing, among others, which require precise and controllable nanoscale deflection.
Original language | English (US) |
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Article number | 224103 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 22 |
DOIs | |
State | Published - 2009 |
Funding
This work was supported by NSF Award Number EEC-0647560. Imaging and measurements were performed at NU ANCE Center of Northwestern University. One author, S.C., is grateful for the U.S. Dept. Homeland Security Graduate Fellowship.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)