Microdischarge devices with 10 or 30 μm square silicon cathode cavities: Pd scaling and production of the XeO excimer

S. J. Park; J. G. Eden; J. Chen; C. Liu

doi:10.1063/1.1825061

Microdischarge devices with 10 or 30 μm square silicon cathode cavities: Pd scaling and production of the XeO excimer

S. J. Park^*, J. G. Eden, J. Chen, C. Liu

^*Corresponding author for this work

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm) 2 or (30 μm) 2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm) 2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 +1 →1 +1 transition of XeO in the green (~510-560 nm) is observed in mixtures of Xe (300-700 Torr) and O2 (1-10 mTorr).

Original language	English (US)
Pages (from-to)	4869-4871
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	21
DOIs	https://doi.org/10.1063/1.1825061
State	Published - Nov 2004

Funding

Discussions with M. J. Kushner and the technical assistance of K. Collier are gratefully acknowledged. This work was supported by the U.S. Air Force Office of Scientific Research and the Electric Power Research Institute.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1825061

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@article{fedcc2ed39e147b681334075618e28e8,

title = "Microdischarge devices with 10 or 30 μm square silicon cathode cavities: Pd scaling and production of the XeO excimer",

abstract = "Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm) 2 or (30 μm) 2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm) 2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 +1 →1 +1 transition of XeO in the green (~510-560 nm) is observed in mixtures of Xe (300-700 Torr) and O2 (1-10 mTorr).",

author = "Park, {S. J.} and Eden, {J. G.} and J. Chen and C. Liu",

note = "Funding Information: Discussions with M. J. Kushner and the technical assistance of K. Collier are gratefully acknowledged. This work was supported by the U.S. Air Force Office of Scientific Research and the Electric Power Research Institute.",

year = "2004",

month = nov,

doi = "10.1063/1.1825061",

language = "English (US)",

volume = "85",

pages = "4869--4871",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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T1 - Microdischarge devices with 10 or 30 μm square silicon cathode cavities

T2 - Pd scaling and production of the XeO excimer

AU - Park, S. J.

AU - Eden, J. G.

AU - Chen, J.

AU - Liu, C.

N1 - Funding Information: Discussions with M. J. Kushner and the technical assistance of K. Collier are gratefully acknowledged. This work was supported by the U.S. Air Force Office of Scientific Research and the Electric Power Research Institute.

PY - 2004/11

Y1 - 2004/11

N2 - Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm) 2 or (30 μm) 2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm) 2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 +1 →1 +1 transition of XeO in the green (~510-560 nm) is observed in mixtures of Xe (300-700 Torr) and O2 (1-10 mTorr).

AB - Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm) 2 or (30 μm) 2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm) 2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 +1 →1 +1 transition of XeO in the green (~510-560 nm) is observed in mixtures of Xe (300-700 Torr) and O2 (1-10 mTorr).

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ER -

Microdischarge devices with 10 or 30 μm square silicon cathode cavities: Pd scaling and production of the XeO excimer

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