Microscale measurement of stresses in a silicon flexure using Raman spectroscopy

V. T. Srikar*, A. K. Swan, B. B. Goldberg, M. S. Ünlü, S. M. Spearing

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report the use of Raman spectroscopy to characterize the bending stresses in a deep reactive-ion etched, single-crystal, silicon flexure of length 2950 μm, width 480 μm, thickness 150 μm, and fillet radius 65 μm, subjected to a tip displacement of 69.5 μm. The spectral resolution of the measurement was 0.02 cm-1, which corresponds to a stress resolution of ∼10 MPa, and the spatial resolution was ∼1 μm. Line scans were performed across the thickness, at several locations along the length, of the flexure. The changes in the Raman shift were converted to stress values, assuming a uniaxial stress rate, without the use of any fitting parameters. A comparison of the measured values with the predictions of analytical and numerical models indicates agreement to within 25-35 MPa (or ∼15%) at locations sufficiently distant from the root. At the root itself, the complex nature of the stress distribution precludes unambiguous stress determination using spectroscopic measurements.

Original languageEnglish (US)
Pages (from-to)219-224
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 2002
EventNano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines - Boston, MA, United States
Duration: Dec 2 2002Dec 4 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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