Microstereolithography of lead zirconate titanate thick film on silicon substrate

X. N. Jiang; C. Sun; X. Zhang; B. Xu; Y. H. Ye

doi:10.1016/S0924-4247(00)00467-2

Microstereolithography of lead zirconate titanate thick film on silicon substrate

X. N. Jiang^*, C. Sun, X. Zhang, B. Xu, Y. H. Ye

^*Corresponding author for this work

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm². The field-induced longitudinal piezoelectric coefficient (d₃₃) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g₃₃) is about 59.5 × 10^-3 V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators.

Original language	English (US)
Pages (from-to)	72-77
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	87
Issue number	1-2
DOIs	https://doi.org/10.1016/S0924-4247(00)00467-2
State	Published - Dec 1 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(00)00467-2

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abstract = "The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm2. The field-induced longitudinal piezoelectric coefficient (d33) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g33) is about 59.5 × 10-3 V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators.",

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AU - Jiang, X. N.

AU - Sun, C.

AU - Zhang, X.

AU - Xu, B.

AU - Ye, Y. H.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm2. The field-induced longitudinal piezoelectric coefficient (d33) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g33) is about 59.5 × 10-3 V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators.

AB - The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm2. The field-induced longitudinal piezoelectric coefficient (d33) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g33) is about 59.5 × 10-3 V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators.

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Microstereolithography of lead zirconate titanate thick film on silicon substrate

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