TY - JOUR
T1 - Microstrip array ring fets with 2d p-ga2 o3 channels grown by mocvd
AU - Razeghi, Manijeh
AU - Lee, Junhee
AU - Gautam, Lakshay
AU - Leburton, Jean Pierre
AU - Teherani, Ferechteh H.
AU - Amiri, Pedram Khalili
AU - Dravid, Vinayak P.
AU - Pavlidis, Dimitris
N1 - Funding Information:
This work is supported by USA Air Force under agreement of FA9550-19-1-0410.
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/12
Y1 - 2021/12
N2 - Gallium oxide (Ga2 O3) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH4) as gallium, oxygen, and silicon precursors, respectively. N2 was used as carrier gas. Hall measurements revealed that films grown with a lower VI/III ratio had a dominant p-type conduction with room temperature mobilities up to 7 cm2 /Vs and carrier concentrations up to ~1020 cm−3 for thinner layers. High resolution transmission electron microscopy suggested that the layers were mainly κ phase. Microstrip field-effect transistors (FETs) were fabricated using 2D p-type Ga2 O3:Si, channels. They achieved a maximum drain current of 2.19 mA and an on/off ratio as high as ~108. A phenomenological model for the p-type conduction was also presented. As the first demonstration of a p-type Ga2 O3, this work represents a significant advance which is state of the art, which would allow the fabrication of p-n junction based devices which could be smaller/thinner and bring both cost (more devices/wafer and less growth time) and operating speed (due to miniaturization) advantages. Moreover, the first scaling down to 2D device channels opens the prospect of faster devices and improved heat evacuation.
AB - Gallium oxide (Ga2 O3) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH4) as gallium, oxygen, and silicon precursors, respectively. N2 was used as carrier gas. Hall measurements revealed that films grown with a lower VI/III ratio had a dominant p-type conduction with room temperature mobilities up to 7 cm2 /Vs and carrier concentrations up to ~1020 cm−3 for thinner layers. High resolution transmission electron microscopy suggested that the layers were mainly κ phase. Microstrip field-effect transistors (FETs) were fabricated using 2D p-type Ga2 O3:Si, channels. They achieved a maximum drain current of 2.19 mA and an on/off ratio as high as ~108. A phenomenological model for the p-type conduction was also presented. As the first demonstration of a p-type Ga2 O3, this work represents a significant advance which is state of the art, which would allow the fabrication of p-n junction based devices which could be smaller/thinner and bring both cost (more devices/wafer and less growth time) and operating speed (due to miniaturization) advantages. Moreover, the first scaling down to 2D device channels opens the prospect of faster devices and improved heat evacuation.
KW - Ga O
KW - MOCVD
KW - P-type
KW - Thin films
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U2 - 10.3390/photonics8120578
DO - 10.3390/photonics8120578
M3 - Article
AN - SCOPUS:85121752675
SN - 2304-6732
VL - 8
JO - Photonics
JF - Photonics
IS - 12
M1 - 578
ER -