Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, F. Jomard, M. Molinari, M. Troyon, D. McGrouther, J. N. Chapman, M. Razeghi, A. Ougazzaden

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7 Scopus citations

Abstract

This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c -sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the GaN/ZnO interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ∼368 nm (∼3.37 eV), which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ∼379 nm (∼3.28 eV), which had been observed in RT photoluminescence spectra prior to removal of the ZnO.

Original languageEnglish (US)
Pages (from-to)1655-1657
Number of pages3
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume27
Issue number3
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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