Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport

Antonio Facchetti*, Choongik Kim, Tobin Jay Marks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Organic semiconductor-dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics. In this study, we report new insights into how the bulk/surface physicochemical characteristics of the gate insulator modulate the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) gate insulators. The results demonstrate that the pentacene growth mode varies substantially with the dielectric/substrate, and correlations are established between pentacene film growth mode, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, we demonstrate here for the first time the key influence of the polymeric insulator layer microstructural mobility on pentacene film growth mode and OTFT response.

Original languageEnglish (US)
Title of host publicationOrganic Field-Effect Transistors VI
Volume6658
DOIs
StatePublished - Dec 1 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Other

OtherOrganic Field-Effect Transistors VI
Country/TerritoryUnited States
CitySan Diego, CA
Period8/26/078/28/07

Keywords

  • Film growth mode
  • Interface
  • OTFT
  • Pentacene
  • Polymer dielectric
  • Tg

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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