Microstructure and field emission of nanocrystalline diamond prepared from C60 precursors

D. Zhou; A. R. Krauss; T. D. Corrigan; T. G. McCauley; R. P.H. Chang; D. M. Gruen

doi:10.1149/1.1837864

Microstructure and field emission of nanocrystalline diamond prepared from C₆₀ precursors

D. Zhou^*, A. R. Krauss, T. D. Corrigan, T. G. McCauley, R. P.H. Chang, D. M. Gruen

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Cold cathode electron field emission from nanocrystalline diamond thin films produced by microwave plasma-enhanced CVD with C₆₀ as the growth precursor has been observed. The lowest onset field obtained is about 2 V/μm, and a 4 V/μm field is required to emit a current density of 0.4 mA/cm². It has been found that hydrogen content of the plasma, which can be varied over a wide range, strongly affects the microstructure and electron field emission properties of the nanocrystalline diamond thin films. This is an important new development which allows one to exercise powerful control over many properties of diamond films. Based on TEM characterization and field emission measurements, the effects of the structural defects and the orientations of the diamond grains on the field emission properties are discussed.

Original language	English (US)
Pages (from-to)	L224-L228
Journal	Journal of the Electrochemical Society
Volume	144
Issue number	8
DOIs	https://doi.org/10.1149/1.1837864
State	Published - Aug 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Microstructure and field emission of nanocrystalline diamond prepared from C60 precursors",

abstract = "Cold cathode electron field emission from nanocrystalline diamond thin films produced by microwave plasma-enhanced CVD with C60 as the growth precursor has been observed. The lowest onset field obtained is about 2 V/μm, and a 4 V/μm field is required to emit a current density of 0.4 mA/cm2. It has been found that hydrogen content of the plasma, which can be varied over a wide range, strongly affects the microstructure and electron field emission properties of the nanocrystalline diamond thin films. This is an important new development which allows one to exercise powerful control over many properties of diamond films. Based on TEM characterization and field emission measurements, the effects of the structural defects and the orientations of the diamond grains on the field emission properties are discussed.",

author = "D. Zhou and Krauss, {A. R.} and Corrigan, {T. D.} and McCauley, {T. G.} and Chang, {R. P.H.} and Gruen, {D. M.}",

year = "1997",

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volume = "144",

pages = "L224--L228",

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T1 - Microstructure and field emission of nanocrystalline diamond prepared from C60 precursors

AU - Zhou, D.

AU - Krauss, A. R.

AU - Corrigan, T. D.

AU - McCauley, T. G.

AU - Chang, R. P.H.

AU - Gruen, D. M.

PY - 1997/8

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N2 - Cold cathode electron field emission from nanocrystalline diamond thin films produced by microwave plasma-enhanced CVD with C60 as the growth precursor has been observed. The lowest onset field obtained is about 2 V/μm, and a 4 V/μm field is required to emit a current density of 0.4 mA/cm2. It has been found that hydrogen content of the plasma, which can be varied over a wide range, strongly affects the microstructure and electron field emission properties of the nanocrystalline diamond thin films. This is an important new development which allows one to exercise powerful control over many properties of diamond films. Based on TEM characterization and field emission measurements, the effects of the structural defects and the orientations of the diamond grains on the field emission properties are discussed.

AB - Cold cathode electron field emission from nanocrystalline diamond thin films produced by microwave plasma-enhanced CVD with C60 as the growth precursor has been observed. The lowest onset field obtained is about 2 V/μm, and a 4 V/μm field is required to emit a current density of 0.4 mA/cm2. It has been found that hydrogen content of the plasma, which can be varied over a wide range, strongly affects the microstructure and electron field emission properties of the nanocrystalline diamond thin films. This is an important new development which allows one to exercise powerful control over many properties of diamond films. Based on TEM characterization and field emission measurements, the effects of the structural defects and the orientations of the diamond grains on the field emission properties are discussed.

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