Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates

U. Lev; E. Zolotoyabko; D. J. Towner; A. L. Meier; B. W. Wessels

doi:10.1088/0022-3727/38/10A/035

Microstructure and strain in thin ferroelectric BaTiO₃ films epitaxially grown on MgO substrates

U. Lev^*, E. Zolotoyabko, D. J. Towner, A. L. Meier, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO₃ films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90° domains.

Original language	English (US)
Pages (from-to)	A184-A189
Journal	Journal of Physics D: Applied Physics
Volume	38
Issue number	10 A
DOIs	https://doi.org/10.1088/0022-3727/38/10A/035
State	Published - May 21 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/38/10A/035

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title = "Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates",

abstract = "High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90° domains.",

author = "U. Lev and E. Zolotoyabko and Towner, {D. J.} and Meier, {A. L.} and Wessels, {B. W.}",

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T1 - Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates

AU - Lev, U.

AU - Zolotoyabko, E.

AU - Towner, D. J.

AU - Meier, A. L.

AU - Wessels, B. W.

PY - 2005/5/21

Y1 - 2005/5/21

N2 - High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90° domains.

AB - High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90° domains.

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JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 10 A

ER -

Microstructure and strain in thin ferroelectric BaTiO₃ films epitaxially grown on MgO substrates

Abstract

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