Microstructure and thermoelectric properties of mechanically robust PbTe-Si eutectic composites

Joseph R. Sootsman; Jiaqing He; Vinayak P. Dravid; Sedat Ballikaya; Derek Vermeulen; Ctirad Uher; Mercouri G. Kanatzidis

doi:10.1021/cm9016672

Microstructure and thermoelectric properties of mechanically robust PbTe-Si eutectic composites

Joseph R. Sootsman, Jiaqing He, Vinayak P. Dravid, Sedat Ballikaya, Derek Vermeulen, Ctirad Uher, Mercouri G. Kanatzidis

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Abstract

The microstructure and thermoelectric properties of the PbTe-Si eutectic system are presented in detail. When rapidly quenched from the melt this system yields materials with thermoelectric properties similar to PbTe itself but with improved mechanical properties. Doping optimization was performed using PbI ₂ as an n-type dopant giving precise control of the thermoelectric properties. Electron microscopy indicates that the PbTe-Si system is both a nanocomposite and microcomposite. Despite the added Si, the thermal conductivity of this composite follows closely that of PbTe. The temperature dependence of the Lorenz number was estimated, and it shows a significant departure from the value of metals (L₀) reaching only 45% of L₀ at 650 K. The optimized ZT for the PbTe-Si(8%) eutectic was 0.9 at 675 K. The improved mechanical robustness of these composites makes them attractive for use in large scale thermoelectric device fabrication.

Original language	English (US)
Pages (from-to)	869-875
Number of pages	7
Journal	Chemistry of Materials
Volume	22
Issue number	3
DOIs	https://doi.org/10.1021/cm9016672
State	Published - Feb 9 2010

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/cm9016672

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abstract = "The microstructure and thermoelectric properties of the PbTe-Si eutectic system are presented in detail. When rapidly quenched from the melt this system yields materials with thermoelectric properties similar to PbTe itself but with improved mechanical properties. Doping optimization was performed using PbI 2 as an n-type dopant giving precise control of the thermoelectric properties. Electron microscopy indicates that the PbTe-Si system is both a nanocomposite and microcomposite. Despite the added Si, the thermal conductivity of this composite follows closely that of PbTe. The temperature dependence of the Lorenz number was estimated, and it shows a significant departure from the value of metals (L0) reaching only 45% of L0 at 650 K. The optimized ZT for the PbTe-Si(8%) eutectic was 0.9 at 675 K. The improved mechanical robustness of these composites makes them attractive for use in large scale thermoelectric device fabrication.",

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AU - He, Jiaqing

AU - Dravid, Vinayak P.

AU - Ballikaya, Sedat

AU - Vermeulen, Derek

AU - Uher, Ctirad

AU - Kanatzidis, Mercouri G.

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N2 - The microstructure and thermoelectric properties of the PbTe-Si eutectic system are presented in detail. When rapidly quenched from the melt this system yields materials with thermoelectric properties similar to PbTe itself but with improved mechanical properties. Doping optimization was performed using PbI 2 as an n-type dopant giving precise control of the thermoelectric properties. Electron microscopy indicates that the PbTe-Si system is both a nanocomposite and microcomposite. Despite the added Si, the thermal conductivity of this composite follows closely that of PbTe. The temperature dependence of the Lorenz number was estimated, and it shows a significant departure from the value of metals (L0) reaching only 45% of L0 at 650 K. The optimized ZT for the PbTe-Si(8%) eutectic was 0.9 at 675 K. The improved mechanical robustness of these composites makes them attractive for use in large scale thermoelectric device fabrication.

AB - The microstructure and thermoelectric properties of the PbTe-Si eutectic system are presented in detail. When rapidly quenched from the melt this system yields materials with thermoelectric properties similar to PbTe itself but with improved mechanical properties. Doping optimization was performed using PbI 2 as an n-type dopant giving precise control of the thermoelectric properties. Electron microscopy indicates that the PbTe-Si system is both a nanocomposite and microcomposite. Despite the added Si, the thermal conductivity of this composite follows closely that of PbTe. The temperature dependence of the Lorenz number was estimated, and it shows a significant departure from the value of metals (L0) reaching only 45% of L0 at 650 K. The optimized ZT for the PbTe-Si(8%) eutectic was 0.9 at 675 K. The improved mechanical robustness of these composites makes them attractive for use in large scale thermoelectric device fabrication.

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Microstructure and thermoelectric properties of mechanically robust PbTe-Si eutectic composites

Abstract

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