Microstructure of GaN1-x Bi x

Z. Liliental-Weber*, Roberto dos Reis, A. X. Levander, K. M. Yu, W. Walukiewicz, S. V. Novikov, C. T. Foxon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper we describe detailed transmission electron microscopy studies of GaN1-x Bi x with 0.05 < x < 0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content.

Original languageEnglish (US)
Pages (from-to)26-32
Number of pages7
JournalJournal of Electronic Materials
Volume42
Issue number1
DOIs
StatePublished - Jan 2013

Keywords

  • GaNBi
  • Microstructure
  • TEM
  • absorption
  • bandgap
  • highly mismatched semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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