Microwave surface resistance of YBa 2 Cu 3 O 7-δ thin films deposited by pulsed organometallic beam epitaxy

D. C. DeGroot, T. P. Hogan, C. R. Kannewurf*, D. B. Buchholz, R P H Chang, F. Gao, M. Feng, R. A. Nordin

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The microwave surface resistance of superconducting YBa 2 Cu 3 O 7-δ thin films deposited by pulsed organometallic beam epitaxy (POMBE) has been characterized using the parallel plate transmission line resonator method. POMBE is an advanced organometric chemical vapor deposition technique where precursor vapors are precisely metered onto the substrate under computer control. In this study, the POMBE reactor was used to deposit epitaxial films of varying thickness onto LaAlO 3 substrates. The deposition procedure and surface-resistance results for films of varying thicknesses are described. The reduction of surface resistance achieved supports the use of the POMBE technique as a possible method for preparing device-quality high-T c films and multi-layer structures.

Original languageEnglish (US)
Pages (from-to)271-277
Number of pages7
JournalPhysica C: Superconductivity and its applications
Volume222
Issue number3-4
DOIs
StatePublished - Mar 20 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Microwave surface resistance of YBa <sub>2</sub> Cu <sub>3</sub> O <sub>7-δ</sub> thin films deposited by pulsed organometallic beam epitaxy'. Together they form a unique fingerprint.

  • Cite this