Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

Abbas Haddadi, S. Adhikary, Arash Dehzangi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Near a wavelength of 4 μm saturated optical gains of 668 and 639 at 77 and 150 K, respectively, are demonstrated over a wide dynamic range. At 150 K, the unity optical gain collector dark current density and DC current gain are 1 × 10-3 A/cm2 and 3710, respectively. This demonstrates the potential for use in high-speed applications. In addition, the phototransistor exhibits a specific detectivity value that is four times higher compared with a state-of-the-art type-II superlattice-based photodiode with a similar cut-off wavelength at 150 K.

Original languageEnglish (US)
Article number021107
JournalApplied Physics Letters
Volume109
Issue number2
DOIs
StatePublished - Jul 11 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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