Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice

Donghai Wu; Jiakai Li; Arash Dehzangi; Manijeh Razeghi

doi:10.1063/1.5136501

Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice

Donghai Wu, Jiakai Li, Arash Dehzangi, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at -50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 μm. With an R × A of 12 783 ω cm² and a dark current density of 1.16 × 10^-5 A/cm² under -50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 10¹¹ cm Hz^1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm² and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 10⁹ cm Hz^1/2/W.

Original language	English (US)
Article number	025018
Journal	AIP Advances
Volume	10
Issue number	2
DOIs	https://doi.org/10.1063/1.5136501
State	Published - Feb 1 2020

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{632d05f418ef4c518f28cb79e1c32dca,

title = "Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice",

abstract = "A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at -50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 μm. With an R × A of 12 783 ω cm2 and a dark current density of 1.16 × 10-5 A/cm2 under -50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.",

author = "Donghai Wu and Jiakai Li and Arash Dehzangi and Manijeh Razeghi",

year = "2020",

month = feb,

day = "1",

doi = "10.1063/1.5136501",

language = "English (US)",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice

AU - Wu, Donghai

AU - Li, Jiakai

AU - Dehzangi, Arash

AU - Razeghi, Manijeh

PY - 2020/2/1

Y1 - 2020/2/1

N2 - A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at -50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 μm. With an R × A of 12 783 ω cm2 and a dark current density of 1.16 × 10-5 A/cm2 under -50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.

AB - A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at -50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 μm. With an R × A of 12 783 ω cm2 and a dark current density of 1.16 × 10-5 A/cm2 under -50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.

UR - http://www.scopus.com/inward/record.url?scp=85079503892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85079503892&partnerID=8YFLogxK

U2 - 10.1063/1.5136501

DO - 10.1063/1.5136501

M3 - Article

AN - SCOPUS:85079503892

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 2

M1 - 025018

ER -

Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice

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