Abstract
The history of semiconductor devices has been characterized by a constant drive towards lower dimensions in order to increase integration density, system functionality and performance. However, this is still far from being comparable with the performance of natural systems such as human brain. The challenges facing semiconductor technologies in the millenium will be to move towards miniaturization. The influence of this trend on the quntum sensing of infrared radiation is one example that is elated here. A new generation of infrared detectors has been developed by growing layers of different semiconductors with nanometer thicknesses. The resulted badgap engineered semiconductor has superior performance compared to the bulk material. To enhance this technology further, we plan to move from quantum wells to quantum wire and quantum dots.
Original language | English (US) |
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Pages (from-to) | 1-10 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4413 |
DOIs | |
State | Published - Jan 1 2001 |
Event | Interantional Conference on Solid State Crystals 2000 Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology - Zakopane, Poland Duration: Oct 9 2000 → Oct 13 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering