Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

Binh Minh Nguyen, Siamak Abdollahi Pour, Simeon Bogdanov, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The bandstructure tunability of Type II antimonide-based superlattices has been significantly enhanced since the introduction of the M-structure superlattice, resulting in significant improvements of Type II superlattice infrared detectors. By using M-structure, we developed the pMp design, a novel infrared photodetector architecture that inherits the advantages of traditional photoconductive and photovoltaic devices. This minority electron unipolar device consists of an M-structure barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. Applied for the very long wavelength detection, at 77K, a 14μm cutoff detector exhibits a dark current 3.3 mA/cm2, a photoresponsivity of 1.4 A/W at 50mV bias and the associated shot-noise detectivity of 4x1010 Jones.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VII
Volume7608
DOIs
StatePublished - May 13 2010
EventQuantum Sensing and Nanophotonic Devices VII - San Francisco, CA, United States
Duration: Jan 24 2010Jan 28 2010

Other

OtherQuantum Sensing and Nanophotonic Devices VII
CountryUnited States
CitySan Francisco, CA
Period1/24/101/28/10

Keywords

  • InAs/GaSb
  • M-structure
  • Minority carriers
  • pMp design
  • Type II superlattice
  • VLWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Nguyen, B. M., Abdollahi Pour, S., Bogdanov, S., & Razeghi, M. (2010). Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection. In Quantum Sensing and Nanophotonic Devices VII (Vol. 7608). [760825] https://doi.org/10.1117/12.855635