Misfit dislocations of epitaxial (110) niobium∥(112̄0) sapphire interfaces grown by molecular beam epitaxy

E. J. Grier*, M. L. Jenkins, A. K. Petford-Long, R. C C Ward, M. R. Wells

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

High resolution electron microscopy, HREM, of (110)Nb∥(112̄0)Al2O3 interfaces grown by molecular beam epitaxy, MBE, has confirmed that the interface is semicoherent for the films investigated, and that for this orientation misfit dislocations occur at the interface both with and without stand-off from the interface. The dislocation networks have been identified by conventional transmission electron microscopy, CTEM, to be composed of misfit dislocations with a Burgers vector of 1/2〈111〉, which corresponds to the Burgers vector of bulk dislocations in Nb.

Original languageEnglish (US)
Pages (from-to)94-98
Number of pages5
JournalThin Solid Films
Volume358
Issue number1
DOIs
StatePublished - Jan 10 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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