Abstract
High resolution electron microscopy, HREM, of (110)Nb∥(112̄0)Al2O3 interfaces grown by molecular beam epitaxy, MBE, has confirmed that the interface is semicoherent for the films investigated, and that for this orientation misfit dislocations occur at the interface both with and without stand-off from the interface. The dislocation networks have been identified by conventional transmission electron microscopy, CTEM, to be composed of misfit dislocations with a Burgers vector of 1/2〈111〉, which corresponds to the Burgers vector of bulk dislocations in Nb.
Original language | English (US) |
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Pages (from-to) | 94-98 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 358 |
Issue number | 1 |
DOIs | |
State | Published - Jan 10 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry