Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

R. Y. Korotkov, J. M. Gregie, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the 4T1(G)→6A1(S) transition.

Original languageEnglish (US)
Pages (from-to)30-33
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
StatePublished - Dec 2001

Keywords

  • Absorption
  • Gallium nitride
  • Manganese
  • Transition metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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