In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the 4T1(G)→6A1(S) transition.
- Gallium nitride
- Transition metals
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering