Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

R. Y. Korotkov; J. M. Gregie; B. W. Wessels

doi:10.1016/S0921-4526(01)00660-3

Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

R. Y. Korotkov, J. M. Gregie, B. W. Wessels^*

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the ⁴T₁(G)→⁶A₁(S) transition.

Original language	English (US)
Pages (from-to)	30-33
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00660-3
State	Published - Dec 2001

Funding

This work is supported by the NSF GOALI program under grant DMR-9705134 and ONR grant # N00014-01-0012.

Keywords

Absorption
Gallium nitride
Manganese
Transition metals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00660-3

Cite this

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title = "Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy",

abstract = "In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the 4T1(G)→6A1(S) transition.",

keywords = "Absorption, Gallium nitride, Manganese, Transition metals",

author = "Korotkov, {R. Y.} and Gregie, {J. M.} and Wessels, {B. W.}",

note = "Funding Information: This work is supported by the NSF GOALI program under grant DMR-9705134 and ONR grant # N00014-01-0012.",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00660-3",

language = "English (US)",

volume = "308-310",

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journal = "Physica B: Condensed Matter",

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T1 - Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

AU - Korotkov, R. Y.

AU - Gregie, J. M.

AU - Wessels, B. W.

N1 - Funding Information: This work is supported by the NSF GOALI program under grant DMR-9705134 and ONR grant # N00014-01-0012.

PY - 2001/12

Y1 - 2001/12

N2 - In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the 4T1(G)→6A1(S) transition.

AB - In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300 K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5 eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25±0.02 eV is tentatively attributed to the 4T1(G)→6A1(S) transition.

KW - Absorption

KW - Gallium nitride

KW - Manganese

KW - Transition metals

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DO - 10.1016/S0921-4526(01)00660-3

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SN - 0921-4526

VL - 308-310

SP - 30

EP - 33

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

Abstract

Funding

Keywords

ASJC Scopus subject areas

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