MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

M. Razeghi; M. Defour; F. Omnes; P. Maurel; E. Bigan; O. Acher; J. Nagle; F. Brillouet; J. C. Portal

doi:10.1016/0022-0248(88)90619-7

MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

M. Razeghi^*, M. Defour, F. Omnes, P. Maurel, E. Bigan, O. Acher, J. Nagle, F. Brillouet, J. C. Portal

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

High quality III-V semiconductor heterojunctions, quantum wells and superlattices have been grown on lattice matched and alternative substrates such as silicon for photonic and electronic devices,using low pressure metalorganic chemical vapor deposition growth technique.

Original language	English (US)
Pages (from-to)	776-781
Number of pages	6
Journal	Journal of Crystal Growth
Volume	93
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(88)90619-7
State	Published - 1988

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(88)90619-7

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title = "MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates",

abstract = "High quality III-V semiconductor heterojunctions, quantum wells and superlattices have been grown on lattice matched and alternative substrates such as silicon for photonic and electronic devices,using low pressure metalorganic chemical vapor deposition growth technique.",

author = "M. Razeghi and M. Defour and F. Omnes and P. Maurel and E. Bigan and O. Acher and J. Nagle and F. Brillouet and Portal, {J. C.}",

year = "1988",

doi = "10.1016/0022-0248(88)90619-7",

language = "English (US)",

volume = "93",

pages = "776--781",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

AU - Razeghi, M.

AU - Defour, M.

AU - Omnes, F.

AU - Maurel, P.

AU - Bigan, E.

AU - Acher, O.

AU - Nagle, J.

AU - Brillouet, F.

AU - Portal, J. C.

PY - 1988

Y1 - 1988

N2 - High quality III-V semiconductor heterojunctions, quantum wells and superlattices have been grown on lattice matched and alternative substrates such as silicon for photonic and electronic devices,using low pressure metalorganic chemical vapor deposition growth technique.

AB - High quality III-V semiconductor heterojunctions, quantum wells and superlattices have been grown on lattice matched and alternative substrates such as silicon for photonic and electronic devices,using low pressure metalorganic chemical vapor deposition growth technique.

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U2 - 10.1016/0022-0248(88)90619-7

DO - 10.1016/0022-0248(88)90619-7

M3 - Article

AN - SCOPUS:0024104304

SN - 0022-0248

VL - 93

SP - 776

EP - 781

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

Abstract

ASJC Scopus subject areas

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