MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire

Ji Hyeon Park, Ryan McClintock, Alexandre Jaud, Arash Dehzangi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We fabricated β-Ga2O3:Si metal-oxide field-effect transistors (MOSFETs) on c-plane sapphire substrates which typically showed maximum drain current of 100 mA mm-1. β-Ga2O3:Si thin films were realized on c-plane sapphire substrates through a combination of metalorganic chemical vapor deposition and post-annealing. The MOSFET device presented excellent on/off drain current ratio of ∼1011 with very low gate leakage current, sharp pinch off behavior, and a breakdown voltage of 400 V at VG = -40 V. The growth and fabrication of β-Ga2O3:Si MOSFETs on c-plane sapphire is valuable to its demonstration of the great potential for future high-power electronic devices.

Original languageEnglish (US)
Article number095503
JournalApplied Physics Express
Volume12
Issue number9
DOIs
StatePublished - Sep 1 2019

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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