We fabricated β-Ga2O3:Si metal-oxide field-effect transistors (MOSFETs) on c-plane sapphire substrates which typically showed maximum drain current of 100 mA mm-1. β-Ga2O3:Si thin films were realized on c-plane sapphire substrates through a combination of metalorganic chemical vapor deposition and post-annealing. The MOSFET device presented excellent on/off drain current ratio of ∼1011 with very low gate leakage current, sharp pinch off behavior, and a breakdown voltage of 400 V at VG = -40 V. The growth and fabrication of β-Ga2O3:Si MOSFETs on c-plane sapphire is valuable to its demonstration of the great potential for future high-power electronic devices.
ASJC Scopus subject areas
- Physics and Astronomy(all)