CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.

Translated title of the contribution: MOCVD Growth and Characterization of InP/GaInAs/InP Quantum Wells.

J. Chazelas*, J. Olivier, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

X-ray microanalysis has been performed using a STEM at 100 keV allowing an incident electron probe size as small as 1 nanometer. With the experimental conditions, the spatial resolution of this technique is estimated to be about 3 nanometers. Good correlations between these two techniques are obtained on LP-MOCVD quantum wells (InP/GaInAs/InP), and the non-equivalence of the two heterojunctions is evidenced.

Translated title of the contributionMOCVD Growth and Characterization of InP/GaInAs/InP Quantum Wells.
Original languageFrench
Pages (from-to)197-198
Number of pages2
JournalLe Vide, les couches minces
Volume43
Issue number241
StatePublished - Mar 1 1988

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'MOCVD Growth and Characterization of InP/GaInAs/InP Quantum Wells.'. Together they form a unique fingerprint.

Cite this