CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.

J. Chazelas; J. Olivier; M. Razeghi

CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.

Translated title of the contribution: MOCVD Growth and Characterization of InP/GaInAs/InP Quantum Wells.

J. Chazelas^*, J. Olivier, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

X-ray microanalysis has been performed using a STEM at 100 keV allowing an incident electron probe size as small as 1 nanometer. With the experimental conditions, the spatial resolution of this technique is estimated to be about 3 nanometers. Good correlations between these two techniques are obtained on LP-MOCVD quantum wells (InP/GaInAs/InP), and the non-equivalence of the two heterojunctions is evidenced.

Translated title of the contribution	MOCVD Growth and Characterization of InP/GaInAs/InP Quantum Wells.
Original language	French
Pages (from-to)	197-198
Number of pages	2
Journal	Le Vide, les couches minces
Volume	43
Issue number	241
State	Published - Mar 1 1988

ASJC Scopus subject areas

General Engineering

Cite this

@article{004f3bd0de1d422c816cbb42fe3560ad,

title = "CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.",

abstract = "X-ray microanalysis has been performed using a STEM at 100 keV allowing an incident electron probe size as small as 1 nanometer. With the experimental conditions, the spatial resolution of this technique is estimated to be about 3 nanometers. Good correlations between these two techniques are obtained on LP-MOCVD quantum wells (InP/GaInAs/InP), and the non-equivalence of the two heterojunctions is evidenced.",

author = "J. Chazelas and J. Olivier and M. Razeghi",

year = "1988",

month = mar,

day = "1",

language = "French",

volume = "43",

pages = "197--198",

journal = "Le Vide, les couches minces",

issn = "0223-4335",

publisher = "Societe Francaise du Vide",

number = "241",

}

TY - JOUR

T1 - CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.

AU - Chazelas, J.

AU - Olivier, J.

AU - Razeghi, M.

PY - 1988/3/1

Y1 - 1988/3/1

N2 - X-ray microanalysis has been performed using a STEM at 100 keV allowing an incident electron probe size as small as 1 nanometer. With the experimental conditions, the spatial resolution of this technique is estimated to be about 3 nanometers. Good correlations between these two techniques are obtained on LP-MOCVD quantum wells (InP/GaInAs/InP), and the non-equivalence of the two heterojunctions is evidenced.

AB - X-ray microanalysis has been performed using a STEM at 100 keV allowing an incident electron probe size as small as 1 nanometer. With the experimental conditions, the spatial resolution of this technique is estimated to be about 3 nanometers. Good correlations between these two techniques are obtained on LP-MOCVD quantum wells (InP/GaInAs/InP), and the non-equivalence of the two heterojunctions is evidenced.

UR - http://www.scopus.com/inward/record.url?scp=0023982812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023982812&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0023982812

SN - 0223-4335

VL - 43

SP - 197

EP - 198

JO - Le Vide, les couches minces

JF - Le Vide, les couches minces

IS - 241

ER -

CROISSANCE MOCVD ET CARACTERISATION DE PUITS QUANTIQUES InP/GaInAs/InP.

Abstract

ASJC Scopus subject areas

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