MOCVD growth, characterization, and use of GaInAsP-InP systems for photonic and electronic devices.

Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Using liquid-phase metalorganic chemical vapor deposition (MOCVD) the authors showed the feasibility of using various metalorganic sources of group III elements with hybrid sources of group V species for the InP-InP, GaInAs-InP, GaInAsP-InP, GaInP-GaAs, and strained layer systems for photonic and electronic devices. Excellent photonic devices such as BRS lasers, DFB (distributed-feedback) lasers, phase-locked high-power laser arrays, p-i-n photodetector, and waveguides based on these materials have been fabricated, and most of them have been already transferred to production.

Original languageEnglish (US)
Title of host publicationCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
PublisherPubl by IEEE
Number of pages1
ISBN (Print)155752033X
StatePublished - Dec 1 1988

Publication series

NameCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7

ASJC Scopus subject areas

  • Engineering(all)

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