TY - GEN
T1 - MOCVD growth, characterization, and use of GaInAsP-InP systems for photonic and electronic devices.
AU - Razeghi, Manijeh
PY - 1988/12/1
Y1 - 1988/12/1
N2 - Summary form only given. Using liquid-phase metalorganic chemical vapor deposition (MOCVD) the authors showed the feasibility of using various metalorganic sources of group III elements with hybrid sources of group V species for the InP-InP, GaInAs-InP, GaInAsP-InP, GaInP-GaAs, and strained layer systems for photonic and electronic devices. Excellent photonic devices such as BRS lasers, DFB (distributed-feedback) lasers, phase-locked high-power laser arrays, p-i-n photodetector, and waveguides based on these materials have been fabricated, and most of them have been already transferred to production.
AB - Summary form only given. Using liquid-phase metalorganic chemical vapor deposition (MOCVD) the authors showed the feasibility of using various metalorganic sources of group III elements with hybrid sources of group V species for the InP-InP, GaInAs-InP, GaInAsP-InP, GaInP-GaAs, and strained layer systems for photonic and electronic devices. Excellent photonic devices such as BRS lasers, DFB (distributed-feedback) lasers, phase-locked high-power laser arrays, p-i-n photodetector, and waveguides based on these materials have been fabricated, and most of them have been already transferred to production.
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M3 - Conference contribution
AN - SCOPUS:0024129294
SN - 155752033X
T3 - CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
BT - CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
PB - Publ by IEEE
ER -