MOCVD GROWTH FOR HETEROSTRUCTURES AND TWO-DIMENSIONAL ELECTRONIC SYSTEMS.

M. Razeghi*, J. P. Duchemin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The LPMOCVD technique has been successfully used to grow heterojunctions and superlattices of Ga//xIn//1// minus //xAs//yP//1// minus //y lattice-matched to InP for the complete compositional range between InP ( lambda equals 0. 91 um, Eg equals 1. 35 eV) and the ternary compound Ga//0//. //4//7 In//0//. //5//3 As ( lambda equals 1. 67 um, Eg equals 0. 75 eV). Authors have observed Shubnikov-de Haas oscillations in heterojunctions and superlattices of Ga//0//. //4//7 In//0//. //5//3 As-InP and Ga//0//. //2//5In//0//. //7//5As//0//. //5 P//0//. //5 - InP showing evidence of two-dimensional behaviour.

Original languageEnglish (US)
Title of host publicationSpringer Series in Solid-State Sciences
PublisherSpringer Verlag
Pages100-114
Number of pages15
ISBN (Print)3540135847, 9783540135845
DOIs
StatePublished - Jan 1 1984

Publication series

NameSpringer Series in Solid-State Sciences
ISSN (Print)0171-1873

ASJC Scopus subject areas

  • Engineering(all)

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